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141.
A detailed investigation of the electrical resistivity of a series of monovalent (Ag) doped polycrystalline La1−xAgxMnO3 pellets with x ranging from 0.05 to 0.30 and measured over the temperature range between 10 and 350 K is reported. La1−xAgxMnO3 compounds have been prepared by a novel pyrophoric technique. XRD analysis of our samples indicates single phasic nature for samples with Ag content ≤0.15, while samples with higher Ag content (x≥0.2) show presence of both magnetic perovskite and non-magnetic Ag phases. A sharp insulator-metal transition with TMI close to room temperature arising out of the paramagnetic to ferromagnetic transition, and a large magneto-resistance (MR=∼16%) near TMI has been observed for all the Ag doped samples. Between TC(Tp1) and 350 K, all the samples show activated conduction following the Emin-Holstein theory of adiabatic small polaron hopping, while at lower temperatures, in the ferromagnetic regime resistivity appears to be governed by various electron scattering processes. Between 20 and 50 K, a distinct minimum for both H=0 and has been observed, which is explained in terms of inelastic scattering and electron-electron interactions.  相似文献   
142.
Leutenegger T  Dual J 《Ultrasonics》2004,41(10):811-822
A method for the detection of defects in cylindrical structures and the determination of their positions and orientations is presented in this paper. The scattered field, which is generated by the interaction of excited guided waves with a defect, is evaluated with an approach named time reverse numerical simulation method (TRNS). Since the excited waves and the scattered field propagate along the sample, the time-consuming scanning of the whole tube can be eliminated. The scattered displacement field is measured in three dimensions over time with a laser vibrometer at different locations distributed equally around the circumference at a fixed axial coordinate far away from the defect. Instead of analyzing the complicated time signals directly, they are played back in time. If the recorded displacement histories of the scattered field are reversed in time and played back in an identical structure, the waves travel back the same path and interfere to a maximum at their origin. The result is an amplitude increase at the position of the defect where the scattered field was generated. Instead of playing back the recorded time signals in an experiment, this step is replaced by a numerical simulation. Only this enables the visualization and detection of the amplitude increase. As long as the simulation is of high accuracy, the position of the maximum interference corresponds exactly to the location of the defect in the experiment, although no defect is implemented in the simulation.  相似文献   
143.
陆爱江  潘必才 《物理》2004,33(12):878-881
文章在紧束缚势模型基础上系统地研究了非手性单壁碳纳米管上单原子空位缺陷结构和电子结构性质.计算表明,单原子空位缺陷会自发地形成5-1DB型缺陷,且该缺陷的局域结构和形成能强烈地依赖于碳纳米管的尺寸、旋度和电学性质.同时作者发现这类缺陷在费米能级以上约0.2eV处产生局域的电子态.  相似文献   
144.
Multi-species reaction-diffusion systems, with nearest-neighbor interaction on a one-dimensional lattice are considered. Necessary and sufficient constraints on the interaction rates are obtained, that guarantee the closedness of the time evolution equation for E n(t)'s, the expectation value of the product of certain linear combination of the number operators on n consecutive sites at time t. The constraints are solved for the single-species left-right-symmetric systems. Also, examples of multi-species system for which the evolution equations of E n(t)'s are closed, are given. Received 25 September 2002 / Received in final form 3 December 2002 Published online 14 February 2003 RID="a" ID="a"e-mail: mamwad@iasbs.ac.ir  相似文献   
145.
利用射频磁控溅射系统在不同N2分压的条件下,制备了一系列ZrN/WN纳米多层膜.借助慢正电子湮没技术分析了样品的缺陷性质,采用纳米压痕仪研究了多层膜的力学性能.结果发现:N2分压为0.4Pa的多层膜具有最小的空位型缺陷浓度,其中心层和膜基结合层的平均S参数分别为0.4402和0.4641,而较低或较高的N2分压都可能导致空位型缺陷浓度的增加.随着空位型缺陷浓度的减小,多层膜的硬度和临界载荷增大.对于空位型缺陷浓度最小的多层膜,其硬度和临界载荷达到最大值,分别为34.8GPa和100mN,说明较低的缺陷浓度有利于提高多层膜的力学性能. 关键词: ZrN/WN纳米多层膜 缺陷性质 力学性能 慢正电子湮没  相似文献   
146.
分别在苏打石灰玻璃、Mo箔、无择优取向的Mo薄膜以及(110)择优取向的Mo薄膜四种不同衬底上,采用共蒸发工艺沉积约2 μm厚的Cu(In,Ga)Se2薄膜,用X射线衍射仪测量薄膜的织构,研究衬底对Cu(In,Ga)Se2薄膜织构的影响.在以上四种衬底上沉积的Cu(In,Ga)Se2薄膜的(112)衍射峰强度依次逐渐减弱,(220/204)衍射峰从无到有且强度逐渐增强.在苏打石灰玻璃和Mo箔衬底上的Cu(In,Ga)Se2关键词: 择优取向 Cu(In 2薄膜')" href="#">Ga)Se2薄膜 太阳电池  相似文献   
147.
郭晖 《应用光学》2007,28(1):12-15
为了实现光阴极光谱响应向短波延伸,分析了Ga1-xAlxAs/GaAs三代微光光阴极光谱响应向短波延伸的机理,提出了准禁带宽度的概念,讨论了Ga1-xAlxAs的禁带宽度随铝组份x值的增加而逐渐变宽的变化规律,计算了不同铝组份下光阴极光谱响应的短波限。通过提高光阴极材料的铝组份,做出了宽光谱响应像管,并给出了相应的光谱响应曲线。通过与标准三代微光像管光谱响应对比,发现:所得光谱响应曲线不仅向短波方向得以延伸,而且理论设计与实验结果吻合很好。  相似文献   
148.
采用光学传输矩阵理论对Al0.5Ga0.5As/AlAs材料分布布喇格反射器(DBR)进行理论研究,分析了-10℃到100℃的范围内,温度变化对不同DBR结构的反射光谱影响.结果表明:随着温度的升高,传统20周期DBR的反射光谱向长波长方向移动,速率约0.05 nm/℃,其中由线热膨胀系数带来的影响小于0.001 nm/℃.当传统DBR的周期数增大时,温度对DBR光谱反射率的影响在减小,同时DBR的反射谱峰值波长发生红移.为了降低温度对DBR反射光谱的影响,提出一种新型的复式DBR结构.分析指出:该复式DBR比传统DBR有更大的反射光谱半峰宽,基本能覆盖同温度的AlGaInP LED电致发光光谱,这对提高LED的出光效率有现实意义.  相似文献   
149.
Zinc oxide based film bulk acoustic resonator as mass sensor was fabricated by multi-target magnetron sputtering under optimized deposition condition. Each layer of the device was well crystallized and highly textural observed by transmission electron microscopy and X-ray diffraction measurement. Through piezoelectric test, the device vibrated with significant distance. The influence of top electrode on resonant frequency and the bio-specimen of mass loading effect were investigated. Data show that the device has qualified properties as mass biosensor, with a resonant frequency of 3-4 GHz and a high sensitivity of 8-10 kHz cm2/ng.  相似文献   
150.
Zinc selenide (ZnSe) thin films (d = 0.11-0.93 μm) were deposited onto glass substrates by the quasi-closed volume technique under vacuum. Their structural characteristics were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The experiments showed that the films are polycrystalline and have a zinc blende (cubic) structure. The film crystallites are preferentially oriented with the (1 1 1) planes parallel to the substrate surface. AFM images showed that the films have a grain like surface morphology. The average roughness, Ra = 3.3-6.4 nm, and the root mean square roughness, Rrms = 5.4-11.9 nm, were calculated and found to depend on the film thickness and post-deposition heat treatment.The spectral dependence of the absorption coefficient was determined from transmission spectra, in the range 300-1400 nm.The values of optical bandgap were calculated from the absorption spectra, Eg = 2.6-2.7 eV.The effect of the deposition conditions and post-deposition heat treatment on the structural and optical characteristics was investigated.  相似文献   
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